Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications

摘要

A novel bipolar transistor structure, namely, a SiC emitter lateral NPMSchottky collector bipolar transistor (SCBT) with a silicon-on-insulator (SOI)substrate is explored using two-dimensional (2-D) simulation. A comprehensivecomparison of the proposed structure with its equivalent Si lateral NPN BJT andan SiC emitter lateral NPN HBT is presented. Based on simulation results, theauthors demonstrate for the first time that the proposed SiC emitter lateralNPM transistor shows superior performance in terms of high current gain andcut-off frequency, reduced collector resistance, negligible reverse recoverytime and suppressed Kirk effect over its equivalent Si lateral NPN BJT and SiCemitter lateral NPN HBT. A simple fabrication process compatible with BiCMOStechnology is also discussed.